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Inventi Impact: VLSI

Articles

  • Inventi:evs/46052/22
    A 19.6–39.4 GHz Broadband Low Noise Amplifier Based on Triple-Coupled Technique and T-Coil Network in 65-nm CMOS
    01-Oct-2022 Research 2022 : October-December
    Jiayue Wan, Xiao Li, Fang Han, Quanwen Qi, Xuzhi Liu, Zhiming Chen

    This paper presents a differential 19.6–39.4 GHz broadband low-noise amplifier (LNA) in 65-nm CMOS technology. The LNA consists of two cascode stage and one common-source stage. To achieve a wide bandwidth and low average noise figure, inter-stage peak-gain distribution technique and transformer-based triple-coupled technique are developed. Besides, a new compact T-coil-based network is proposed to neutralize the parasitic capacitors and enlarge the gain. The measure results show that the 3-dB bandwidth is from 19.6 to 39.4 GHz, the maximum gain is 23.5 dB, and the noise figure (NF) is from 3.7 to 5.8 dB. The dc power comsumption is 46 mW with 1V supply voltage. The input P1dB is −17 dBm at 30 GHz.

    How to Cite this Article
    Attribution/ CC Compliant Citation: Wan, Jiayue, et al. "A 19.6 -39.4 GHz Broadband Low Noise Amplifier Based on Triple-Coupled Technique and T-Coil Network in 65-nm CMOS." Electronics 11.12 (2022): 1833. https://doi.org/10.3390/electronics11121833 http://creativecommons.org/licenses/by/4.0/ Some formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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